Abstract:
The paper presents a technique for obtaining the complex μ-methoxy (copper (II), bismuth (III)) acetylacetonate, Cu3Bi(AA)4(OCH3)5, where HAA = H3C–C(O)–CH2–C(O)–CH3, and results of studying the electrical parameters of this substance. The studied material has been established to be a semiconductor. The composition, structure, and physicochemical properties of the synthesized heterometallic μ-methoxy (copper (II), bismuth (III)) acetylacetonate were verified by elemental, X-ray phase, magnetochemical, IR spectroscopy and thermogravimetric examination. A molar mass and a number of valence electrons in one molecule were calculated for a selected complex compound (AA)4(OCH3)5 (І). The molar mass was equal to 950.5 g/mol, and the number of valence electrons was 229. For experimental studies, a cylindrical sample with a mass of 0.1 g and a volume of 17.67 10 – 9 m3 made of the complex compound (I) by a pressing method was utilized. Investigation of conductive properties of μ-methoxy (copper (II), bismuth (III)) acetylacetonate in compressed form within the temperature range 50-120 °C showed that the electrical resistivity sharply decreases from 8·109 to 7·103 Ohm·cm with increasing temperature, which is typical for semiconductor materials. Conductivities of the material were calculated considering the experimental measurements: 1 was equal to 1.25·10 – 8 1/(Оhm∙m) for 50 °С and 2 was equal to 1.4·10 – 2 1/(Оhm∙m) for
120 °С. The influence of a magnetic field on the electric field strength inside the test sample of the substance was investigated. The magnetic field induction dependence of the Hall voltage for the sample substance was obtained as well. The operating temperature range is from 50 to 220 °C, with chemical compound decomposing at 260 °C. The charge carrier concentration increases from 7.8·1017 m – 3 at 50 °C to
4.14·1029 m – 3 at 220 °C, while the Hall constant decreases from 9.43 m3·C – 1 to 1.8·10 – 11 m3·C – 1, when the temperature increases from 50 to 220 °C. The Hall voltage varies from 1.97·10 – 5 to 1.97·10 – 3 V in the magnetic field range from 0 to 1000 mT. The new magnetically sensitive element based on a synthesized semiconductor material will be used to develop magnetic field sensors.
