The results of simulation of the process of occurrence of damages to the semiconductor elements of radio-electronic equipment under the influence of multi-frequency signals of short duration

Abstract

In articles questions of occurrence of damages in semiconductor elements at influences on them of multi-frequency space-time signals (MF STS) are considered. The studies to improve the affection accumulation method for the case of influence to the semiconductor element base by the multi-frequency space-time signals have been conducted. The estimates of the probability of affection of the semiconductor element under the influence of the multi-frequency space-time signals have been obtained. As a result of the researches conducted, the method of affection accumulation for the case of the influence of MF STS on the semiconductor element base has been improved. This method involves the usage of statistical characteristics of thermal energy to estimate the probability of degradation of the p-n junctions for normal (diodes, transistors) and equable (integrated circuits) distribution laws. The results of modelling the calculation of the probability of damage to semiconductor elements of electronic equipment under the influence of multi-frequency signals of short duration are presented.