Abstract:
In articles questions of occurrence of damages in semiconductor
elements at influences on them of multi-frequency space-time
signals (MF STS) are considered. The studies to improve the
affection accumulation method for the case of influence to the
semiconductor element base by the multi-frequency space-time
signals have been conducted. The estimates of the probability of
affection of the semiconductor element under the influence of the
multi-frequency space-time signals have been obtained. As a
result of the researches conducted, the method of affection
accumulation for the case of the influence of MF STS on the
semiconductor element base has been improved. This method
involves the usage of statistical characteristics of thermal energy
to estimate the probability of degradation of the p-n junctions for
normal (diodes, transistors) and equable (integrated circuits)
distribution laws. The results of modelling the calculation of the
probability of damage to semiconductor elements of electronic
equipment under the influence of multi-frequency signals of short
duration are presented.
